{ { { ? { { { ? absolute maximum ratings symbol parameter value units v dss drain to source voltage 500 v i d continuous drain current(@t c = 25 c) 13 a continuous drain current(@t c = 100 c) 8a i dm drain current pulsed (note 1) 52 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 950 mj e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@t c = 25 c) 208 w derating factor above 25 c 1.67 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 0.60 c/w r cs thermal resistance, case to sink - 0.50 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w features r ds(on) (max 0.49 ? )@v gs =10v gate charge (typical 45nc) improved dv/dt capability, high ruggedness 100% avalanche tested maximum junction temperature range (150c) general description this power mosfet is prod uced using wisdom?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. these devices are well suited for high efficiency switch mode powe r supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. n-channel mosfet symbol 2. drain 3. source 1. gate to-220 1 2 3 FM13N50 13amps 500 voltage n channel power mosfet
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 500 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c - 0.6 - v/c i dss drain-source leakage current v ds = 500v, v gs = 0v --10ua v ds = 400v, t c = 125 c --100ua i gss gate-source leakage, forward v gs = 30v, v ds = 0v --100na gate-source leakage, reverse v gs = -30v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 6.5a -0.390.49 ? gfs forward transconductance v ds =50v , i d =6.5a - 15 - s dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 1600 - pf c oss output capacitance - 180 - c rss reverse transfer capacitance - 25 - dynamic characteristics t d(on) turn-on delay time v dd =250v, i d =13.0a, r g =25 ? (note 4, 5) - 30 - ns t r rise time - 120 - t d(off) turn-off delay time - 120 - t f fall time - 100 - q g total gate charge v ds =400v, v gs =10v, i d =13.0a (note 4, 5) - 45 - nc q gs gate-source charge - 8- q gd gate-drain charg e(miller charge) - 19 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --13 a i sm pulsed source current - - 52 v sd diode forward voltage i s =13.0a, v gs =0v - - 1.4 v t rr reverse recovery time i s =13a, v gs =0v, di f /dt=100a/us -400- ns q rr reverse recovery charge - 450 - nc notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 10.0mh, i as =13.0a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 13.0a, di/dt 200a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. f m 13 n 50 13 a m p s 500 v oltage n c han n e l power mosfet
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